Poster Session & Cocktail


April 09th
17:30 - 19:30
Title Authors
The New 30 THz Solar Telescope in São Paulo, Brazil A.S. Kudaka, M.M. Cassiano, R. Marcon, D.P. Cabezas, L.O.T. Fernandes, R.F. Hidalgo Ramirez, P. Kaufmann and R.V. de Souza
Design of 0.13µm CMOS Low Noise Transimpedance Amplifiers for 10 Gbps Applications Andre Ponchet, Ezio Bastida, Jacobus Swart and Roberto Panepucci
Development of Arrays of Field Effect Transistors Based on CVD Graphene Aline M. Pascon, Cecilia C. C. Silva, Jair F. Souza, Leonardo R. C. Fonseca and Jose A. Diniz
HATS: Ground-Based New Tool for THz Solar Flare Observations R. Marcon, P. Kaufmann, A. Abrantes, E. Bortolucci, L. Fernandes, A. Kudaka, N. Machado and F.C. Rufino
Reducing the Off-State Leakage Current for Applications in Radioactive Environment by Using the Wave Layout for MOSFETs Rafael Navarenho de Souza, Marcilei Silveira and Salvador Gimenez
Low-dropout Regulator Output Capacitor-free Topology Renan Martucci
ELECTROSPUN NANOFIBERS WITH INCORPORATED PARTICLES AS MEMBRANE FOR SENSORS Demétrius Saraiva Gomes and Ana Neilde Rodrigues Da Silva
Electrical characterization of MOS capacitors with thin silicon oxynitrides aiming at MOS tunnel diodes Verônica Christiano and Sebastião G. Dos Santos Filho
Dielectrophoretic manipulation of individual nickel nanowires for electrical transport measurements Marcos Vinicius Puydinger Dos Santos, Lucas Lima, Rafael Mayer, Fanny Béron, Kleber Pirota, Stanislav Moshkalev and José Diniz
Visibility of Weak THz Sources on a Bright Background R.V. Souza, P. Kaufmann, D.P. Cabezas and L.T. Manera
Analysis of Vertical Field Dependent Mobility Model Applied to FinFET Simulation Danilo O. Silva, Arianne S. N. Pereira and Renato Giacomini
Intrinsic Length and Temperature Influence on the Operation of PIN SOI Photodiodes Carla Novo, João Batista, Renato Giacomini and Denis Flandre
Study of gated PIN CMOS BULK photodiode concerning intrinsic concentration and gate bias Renato Zapata Lusni, Carla Novo and Renato Giacomini
Short Channel Effects Comparison between Double and Triple Gate Junctionless Nanowire Transistors Bruna Paz and Marcelo Antonio Pavanello
Modelling of the leakage current in MOS thin silicon oxynitrides aiming at MOS tunnel diodes Bárbara Alandia, Verônica Christiano and Sebastião Dos Santos
The effect of bias in X-Ray Effects on MOSFETs Felipe Leite, Marcilei Aparecida Guazzelli Da Silveira and Roberto Baginski Batista Santos
OCTO Layout Variations as an Alternative to Mitigate TID Effects Leonardo Fino, Marcilei Aparecida Guazzelli Da Silveira, Christian Renaux, Denis Flandre and Salvador Gimenez
Demonstration of a Low Voltage Power Converter with Application to Photovoltaic Cells Antonio Telles, Saulo Finco and Jair Lins De Emeri Jr.
Photonic-Integrated Circuit Simulation with Measurement-extracted Performance for Modulation and Photodetection Stefan Tenenbaum, Leandro Zanvettor, Célio Finardi, André Ponchet and Roberto Panepucci
Process and Electrical 3D Simulations of Fabricated FinFET using Brazilian Facilities M. A. Keiler, L. P. B. Lima, M. V. P. Dos Santos and J. A. Diniz
Study of Low-Field Mobility on SOI n-FinFETs with Standard and Rotated Substrate Orientations Thales Augusto Ribeiro and Marcelo Antonio Pavanello
Behavior of Irradiated MOSFETs submitted to Thermal Aneealing Karlheinz Cirne, Marcilei Aparecida Guazzelli Da Silveira, Felipe Leite, Nilberto Medina and Roberto Baginski Batista Santos
Analysis of Common-Source Current Mirrors Implemented with Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs Rafael Assalti and Michelly de Souza
Effects of High Temperature on the Harmonic Distortion of the Asymmetric Self-Cascode of SOI nMOSFETs Lígia D'Oliveira, Rodrigo Doria and Michelly de Souza
Drain Current Analysis in Planar MOS Magnetic Field Sensor with Asymmetric Contacts Rodrigo Silva, André Perin and Renato Giacomini
The influence of the mobility in JNT and FinFET devices with Self Heating Effect Genaro Mariniello and Marcelo Antonio Pavanello
Project and Development of Submicron pMOSFET Junctionless Nanowire Transistor Juliana Nemer and Marcelo Antonio Pavanello
Study of the Low-frequency noise in Submicron Graded-Channel Silicon on Insulator nMOSFETS at room temperature Allan Molto, Rodrigo T. Doria, Michelly de Souza and Marcelo Antonio Pavanello
MOS-Bipolar Pseudo-resistor Characterization – Circuit and Extraction Method Pedro Benko and Renato Giacomini


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