April 09th 17:30 - 19:30 |
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Title | Authors |
The New 30 THz Solar Telescope in São Paulo, Brazil | A.S. Kudaka, M.M. Cassiano, R. Marcon, D.P. Cabezas, L.O.T. Fernandes, R.F. Hidalgo Ramirez, P. Kaufmann and R.V. de Souza |
Design of 0.13µm CMOS Low Noise Transimpedance Amplifiers for 10 Gbps Applications | Andre Ponchet, Ezio Bastida, Jacobus Swart and Roberto Panepucci |
Development of Arrays of Field Effect Transistors Based on CVD Graphene | Aline M. Pascon, Cecilia C. C. Silva, Jair F. Souza, Leonardo R. C. Fonseca and Jose A. Diniz |
HATS: Ground-Based New Tool for THz Solar Flare Observations | R. Marcon, P. Kaufmann, A. Abrantes, E. Bortolucci, L. Fernandes, A. Kudaka, N. Machado and F.C. Rufino |
Reducing the Off-State Leakage Current for Applications in Radioactive Environment by Using the Wave Layout for MOSFETs | Rafael Navarenho de Souza, Marcilei Silveira and Salvador Gimenez |
Low-dropout Regulator Output Capacitor-free Topology | Renan Martucci |
ELECTROSPUN NANOFIBERS WITH INCORPORATED PARTICLES AS MEMBRANE FOR SENSORS | Demétrius Saraiva Gomes and Ana Neilde Rodrigues Da Silva |
Electrical characterization of MOS capacitors with thin silicon oxynitrides aiming at MOS tunnel diodes | Verônica Christiano and Sebastião G. Dos Santos Filho |
Dielectrophoretic manipulation of individual nickel nanowires for electrical transport measurements | Marcos Vinicius Puydinger Dos Santos, Lucas Lima, Rafael Mayer, Fanny Béron, Kleber Pirota, Stanislav Moshkalev and José Diniz |
Visibility of Weak THz Sources on a Bright Background | R.V. Souza, P. Kaufmann, D.P. Cabezas and L.T. Manera |
Analysis of Vertical Field Dependent Mobility Model Applied to FinFET Simulation | Danilo O. Silva, Arianne S. N. Pereira and Renato Giacomini |
Intrinsic Length and Temperature Influence on the Operation of PIN SOI Photodiodes | Carla Novo, João Batista, Renato Giacomini and Denis Flandre |
Study of gated PIN CMOS BULK photodiode concerning intrinsic concentration and gate bias | Renato Zapata Lusni, Carla Novo and Renato Giacomini |
Short Channel Effects Comparison between Double and Triple Gate Junctionless Nanowire Transistors | Bruna Paz and Marcelo Antonio Pavanello |
Modelling of the leakage current in MOS thin silicon oxynitrides aiming at MOS tunnel diodes | Bárbara Alandia, Verônica Christiano and Sebastião Dos Santos |
The effect of bias in X-Ray Effects on MOSFETs | Felipe Leite, Marcilei Aparecida Guazzelli Da Silveira and Roberto Baginski Batista Santos |
OCTO Layout Variations as an Alternative to Mitigate TID Effects | Leonardo Fino, Marcilei Aparecida Guazzelli Da Silveira, Christian Renaux, Denis Flandre and Salvador Gimenez |
Demonstration of a Low Voltage Power Converter with Application to Photovoltaic Cells | Antonio Telles, Saulo Finco and Jair Lins De Emeri Jr. |
Photonic-Integrated Circuit Simulation with Measurement-extracted Performance for Modulation and Photodetection | Stefan Tenenbaum, Leandro Zanvettor, Célio Finardi, André Ponchet and Roberto Panepucci |
Process and Electrical 3D Simulations of Fabricated FinFET using Brazilian Facilities | M. A. Keiler, L. P. B. Lima, M. V. P. Dos Santos and J. A. Diniz |
Study of Low-Field Mobility on SOI n-FinFETs with Standard and Rotated Substrate Orientations | Thales Augusto Ribeiro and Marcelo Antonio Pavanello |
Behavior of Irradiated MOSFETs submitted to Thermal Aneealing | Karlheinz Cirne, Marcilei Aparecida Guazzelli Da Silveira, Felipe Leite, Nilberto Medina and Roberto Baginski Batista Santos |
Analysis of Common-Source Current Mirrors Implemented with Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs | Rafael Assalti and Michelly de Souza |
Effects of High Temperature on the Harmonic Distortion of the Asymmetric Self-Cascode of SOI nMOSFETs | Lígia D'Oliveira, Rodrigo Doria and Michelly de Souza |
Drain Current Analysis in Planar MOS Magnetic Field Sensor with Asymmetric Contacts | Rodrigo Silva, André Perin and Renato Giacomini |
The influence of the mobility in JNT and FinFET devices with Self Heating Effect | Genaro Mariniello and Marcelo Antonio Pavanello |
Project and Development of Submicron pMOSFET Junctionless Nanowire Transistor | Juliana Nemer and Marcelo Antonio Pavanello |
Study of the Low-frequency noise in Submicron Graded-Channel Silicon on Insulator nMOSFETS at room temperature | Allan Molto, Rodrigo T. Doria, Michelly de Souza and Marcelo Antonio Pavanello |
MOS-Bipolar Pseudo-resistor Characterization – Circuit and Extraction Method | Pedro Benko and Renato Giacomini |