Workshop Program

April 09th
8:00 - 8:50 Registration
8:50 - 9:00

09:00 - 10:30

Thermo-magnetic effects in nano scaled FET's: characterization, modelling, and simulation
Prof. Edmundo A. Gutiérrez - INAOE, Mexico (IEEE EDS Distinguished Lecturer)
In this talk experimental results of the effect of a magnetic field on the transport properties of strained 28 nm MOSFETs are introduced. The experimental results are analysed in terms of magneto-transport properties of electrons/holes, the magneto-tunneling, and the solution of the coupled Schrodinger-Poisson equation system with the magnetic field incorporated as a parameter.

Based on the analysis and the experimental results, a new model for magneto-tunneling is incorporated into the device simulator gtsFramework by GlobalTcad. The commercial device simulator is able to reproduce the experimental results of the gate tunneling current upon exposure to an external magnetic field. Further experimental results in advanced experimental FET devices will also be introduced at the end of this talk.

10:30 - 11:00 Coffee Break
11:00 - 12:00

Prof. Nilton Morimoto - USP, Brazil

12:00 - 14:00 Lunch
14:00 - 15:30 Smart sensor technology for niche applications
Prof. Edval Santos - UFPE, Brazil (IEEE EDS Distinguished Lecturer)
Sensor technology has become ubiquitous, sensors are everywhere and more are arriving.  Combination of transducer and digital technology to produce smart sensors allows for the widespread usage of sensors in traditional and novel applications.  The downsizing of sensors, combined with nanotechnology and distributed processing, to produce smart dust is a possible future development.  Concerns as sensors enters communication devices, houses, clothes, shoes, streets is discussed.  To direct such development, the IEEE has approved a family of standards, named IEEE 1451.  This set of standards for smart sensors is summarized in the presentation. 

Smart sensor technology presents as an opportunity for developing countries, as sensors needs to be optimized for the application.   In the Brazilian landscape, smart sensors can be used in areas of technology which has a strong presence in the Brazilian economy, such as: agriculture, livestock, food, beverage, aerospace, oil and gas, mining, automobile, energy, water, environment, security, defense.  As examples, the usage of sensors in beverage production and in oil and gas production are presented, including a process development for harsh environments.
15:30 - 16:00 Coffee Break
16:00 - 17:30 On-chip capacitance ratio measurement using a switched-capacitor filter
Dr. Antonio Petraglia - UFRJ, Brazil
Capacitance matching is a critical issue in the design of switched-capacitor (SC) filters, A/D, D/A and DC-DC converters, because it is closely related to the yield of the
fabricated chips.The most widely adopted layout practice to improve capacitance matching employs identical unit capacitors in parallel. The capacitors are placed in common-centroid topology so that errors caused by process gradients can be compensated. However, depending on the number of unit capacitors, this placement may be a difficult, or even an impossible, task.

In this presentation capacitance array placement issues are initially addressed. Then the analysis and design of an on-chip capacitance ratio measurement technique that employs a switched-capacitor filter, whose transmission zero is a direct function of the capacitance ratio of interest, are described. Experimental results obtained with a prototype circuit fabricated in a 0.35um CMOS process are shown.
17:30 - 19:30 Poster Session & Cocktail
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April 10th
9:00 - 10:30 Theory of resistive switching in Memristors
Prof. Gustavo Dalpian  - UFABC, Brazil
The memristor is a device composed of a thin film of an insulator material sandwiched between two metallic electrodes. This system is capable of storing information via its resistance state, which is written - switched from high electrical conductivity to low conductivity or the other way around - by applying a certain threshold value of voltage across the electrodes. This resistance state can then be and read using a much smaller voltage.

Although a lot of work has been devoted to the study of these systems, the microscopic mechanism responsible for resistance switching is still not completely understood. In this talk we will present an electronic model for resistive switching, and and compare it to other diffusion models.
10:30 - 11:00

Coffee Break

11:00 - 12:00 Semiconductor Analysis from Attoampere to Kilovolts
Raphael Mendes Motta  - Tektronix, Brazil
In this brief presentation, Raphael will talk about the challenges in test and measurement electronic circuits from very small measures to high power, as well as the equipment needed to do this analysis. There will be a demonstration of characterization of semiconductors, with I-V and C-V curves.
12:00 - 14:00 Lunch
14:00 - 15:30 Reliability of MOS Devices and Circuits
Prof. Gilson Inácio Wirth  - UFRGS, Brazil

With the device sizes shrinking well below 100 nm and introduction of novel materials in the fabrication technology, new phenomena started playing a role on the reliability of MOS devices. As a consequence, performance and reliability become influenced also by factors other than physical dimensions. We need to understand the underlying physical mechanisms, and develop analysis and modeling techniques to support IC designers. Furthermore, the variations of parameters over time (aging and transient effects such as noise and soft errors due to ionizing radiation) may lead to dramatically increased overhead in the timing budget, as well as on test procedures. Effects that play a major role on the reliability of today digital and analog designs are discussed, as well as effects that are expected to become relevant in future technologies.

Modeling techniques to abstract the physical level effects into the design flow are studied. The main focus of this talk will be on charge trapping phenomena in MOSFETS, going from Noise to Bias Temperature Instability (BTI). MOSFET low-frequency (LF) noise is known to be dominated by charge capture and emission by defects (traps) close to the Si-SiO2 interface. A circuit level modeling and simulation approach, valid at both DC and large signal (AC) biasing, is presented. The role of charge trapping and de-trapping in BTI (Bias Temperature Instability) is also discussed and modeled. Mutual relation between the different reliability phenomena (LF noise, BTI and RDF) is also studied. For instance, random dopant fluctuations (RDF) may exacerbate the impact of BTI and low-frequency noise on circuit performance. Design techniques to improve yield and reliability are also addressed.
15:30 Concluding Remarks and Coffee End